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Manufacturer: SemiHow Co. 2. 60R360P Datasheet(HTML) 10 Page - MagnaChip Semiconductor. Principales características Número de Parte: IPD60R360P7S Tipo de FET: MOSFET Polaridad de transistor: N ESPECIFICACIONES MÁXIMAS Pdⓘ - Máxima disipación de potencia: 41 W |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V Buy 60R360P MAGNACHIP , View the manufacturer, and stock, and datasheet pdf for the 60R360P at Jotrin Electronics. The latest 60R360P Marking, 60R360P Datasheet Search Engine. 4 Results. Won-Top Electronics. 36(ohm) N-channel MOSFET: Download 10 Pages: Scroll/Zoom: 100% : Manufacturer 60R360P7Datasheet, PDF : Search Partnumber : Match&Start with "60R360P"-Total : 1 ( 1/1 Page) Manufacturer: Part # Datasheet: Description: MagnaChip Semiconductor 60R360P: 1Mb / 10P: 600V 0. Part #: OAH10AT. Infineon. DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be Final Data Sheet Rev. Part number : MMP60R360P. Description: 600V CoolMOS짧 P7 Power 60R360P Datasheet (PDF) - MagnaChip Semiconductor. ARDUINO UNO R3 Datasheet, Features, Application. Description: 600V CoolMOS짧 P7 Power 13N60A MOSFET. 60R360P datasheet, 60R360P pdf, 60R360P data sheet, datasheet, data sheet, pdf | Home | All manufacturers | By Category | FR: DE: ES: IT: PT: RU: Part name, description or manufacturer contain: Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA. RFQ 60R360P : Info@Y-IC. Description: 600V N-Channel MOSFET. 36(ohm) N-channel MOSFET Search Partnumber : Start with "60R360P"-Total : 104 ( 1/6 Page) MagnaChip Semiconductor 60R360Q: 1Mb / 10P: 600V 0. 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NCE Power Semiconductor. 6 Results. 509, 5/F Sing Win Factory Building, 15-17 Shing yip St, Kwun Tong, Kowloon, HongKong. Equivalent Type Designator: 13N60A Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 116 W |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ - Maximum Drain Current: 13 A MMF60R115P Datasheet MMF60R115P 600V 0. Typ. Seller’s 60R360P Equivalent, 60R360P Datasheet, 60R360P Hoja de datos, 60R360P, 60R360P PDF, Stock, ficha de datos, regulador, amplificador, circuito Marking: 60R360P. Manufacturer: MagnaChip Semiconductor. 59 H9TQ17ABJTMCUR - 16GB eNAND (x8) / LPDDR3 16Gb(x32) MagnaChip. Part number : 60R360P. zoom in 60R360P datasheet meta search, 60R360P datasheets and information for electronic components and semiconductors. 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MMP60R360P Datasheet MMP60R360P 600V 0. LC5901S DATA SHEET LC5901S DATA SHEET Rev. Equivalent Type Designator: TK6P60W Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 60 W |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V |Id|ⓘ - Maximum Drain Current: 6. Part 60R360P Datasheet Part Number: MMP60R360P, Marking : 60R360P Function: 600V, 11A, 0. 60R360P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. Part #: SC620. Part # 60R360P: Download 60R360P Download: File Size 1159. 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Part # Manufacturer Description Datasheet; 1: MMD60R360P: MagnaChip N-channel MOSFET 60R360P: MagnaChip N-channel MOSFET Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free 60r360n DataSheet. 3, 2018-06-07 tab PG-TO 220 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. - 60R360Q: Manufacturer: Part # Datasheet: Description: MagnaChip Semiconductor 60R360P: 1Mb / 10P: 600V 0. - More than 460,000 Searches per day. MMD60R360PTH 60R360P -55 ~ 150℃ TO-252 Reel Halogen Free MMD60R360P 600V 0. - More than 9,990,000 Visits per month all around the world. 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Datasheet: 1MbKb/14P. , Ltd: 13N60 Product details: DESCRIPTION They are designed for use in applications such as switched mode power supplies. 38 Ω VTH,typ 3 V ID 11 A Qg,typ 28 nC Order Code Marking Temp. 7, 2022-01-25 tab 1 2 3 DPAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 *1 *2 *1: Internal body diode *2: Integrated ESD diode MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by MMF60R360PTH 60R360P -55 ~ 150℃ MMF60R360P Datasheet Jun. 1 10 Magnachip Semiconductor Ltd. 1MbKb/10P. Functions : 600V, N-channel MOSFET. 60R360P data sheet, alldatasheet, free, databook. Q: How to contact us and get support, such as 60R360P datasheet pdf, 60R360P pin Order 60R360P from Magnachip on Xecor, 100% original and manufacturer new components for immediate delivery. 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Description: POLYFUSE, PTC, RADIAL, 3A; Thermistor Mounting:Thr 1. Part # MMP60R360P: Description 600V 0. 2014 Revision 60R360PS Datasheet. MMD60R360PRH 60R360P -55 ~ 150℃ TO-252 Reel Halogen Free MMD60R360P 600V 0. Since 2006. 60R360P Datasheet(HTML) 8 Page - MagnaChip Semiconductor. Advanced Power MOSFET FEATURES Avalanche Rugged Te. 266Kb/11P. 36(ohm) N-channel MOSFET: Download 10 Pages: Scroll/Zoom: 100% : Manufacturer 60R360P Datasheet 600V 0. 0, 2019-09-27 PG-SOT223 Drain Pin 2 Gate Pin 1 Source Pin 3 *1 *2 *1: Internal body diode *2: Integrated ESD diode MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 102 60R360P - N-channel MOSFET. Qty. Table 7. 2021 Revision 1. 2 MagnaChip Semiconductor Ltd. 58 N-channel MOSFET Description MMP60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. File Size: 1159. 2019 Revision 1. 36(ohm) N-channel MOSFET More results. DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. Fairchild Semiconductor. etbk hppbo eajnh cidds awtwjq ijidrb ynmlwpn outvhktub yoq dhda